Ex-situ conditioning of laser facets and passivated devices formed using the same

ABSTRACT

Edge-emitting laser diodes having mirror facets include passivation coatings that are conditioned using an ex-situ process to condition the insulating material used to form the passivation layer. An external energy source (laser, flash lamp, e-beam) is utilized to irradiate the material at a given dosage and for a period of time sufficient to condition the complete thickness of passivation layer. This ex-situ laser treatment is applied to the layers covering both facets of the laser diode (which may comprise both the passivation layers and the coating layers) to stabilize the entire facet overlay. Importantly, the ex-situ process can be performed while the devices are still in bar form.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a divisional of U.S. patent application Ser. No.15/996,614, filed Jun. 4, 2018 and herein incorporated by reference.

TECHNICAL FIELD

The present invention relates to laser devices and, more particularly,to edge-emitting laser diodes having mirror facets that are conditionedusing an ex-situ process.

BACKGROUND OF THE INVENTION

High power semiconductor laser diodes have become important componentsin the technology of optical communication, particularly because suchlaser diodes can be used for fiber pumping (amplification of opticalsignals) and other high power applications. In most cases features suchas long lifetime, reliable and stable output, high output power, highelectro-optic efficiency, and high beam quality are generally desirable.One key for the long-term reliability of modern high-power laser diodesdepends on the stability of the laser facets cleaved to form theopposing mirrors of the laser cavity.

The physical degradation of laser facets is a complex reaction that canbe driven by light, current, and heat, resulting in power degradationand, in severe cases, to catastrophic optical damage (COD) of the mirrorsurfaces themselves. A process developed by IBM and referred to as “E2passivation” has been used to address these concerns and minimize thepossibility of COD. As described in IBM's U.S. Pat. No. 5,063,173entitled “Method for Mirror Passivation of Semiconductor Laser Diodes”issued to M. Gasser et al., the E2 process involves the deposition of alayer of silicon (or perhaps germanium or antimony) as a coating overthe bare facet (mirror) surfaces. The presence of the coating functionsas a passivation layer, preventing the diffusion of impurities capableof reacting with the mirror facet interface.

Today's laser diodes are operated at relatively high powers and theseprior art passivation layers, as deposited, have been found to breakdown and allow for damage of the mirror surfaces to occur. Therefore, inorder to obtain stable mirrors for infrared high power laser diodes, ithas now become a standard practice to “condition” the passivation layer.As performed today, conditioning is an extremely time-consuming processthat requires operating the laser diode at a reduced current level for aprolonged period of time (e.g., tens to hundreds of hours) so as to forma crystalline structure inside the as-deposited amorphous passivationlayer, forming a stable interface between the passivation layer and themirror facet. Besides the time period required for this conditioningprocess, it is necessarily performed on a device-by-device basis,further extending the time and expense of the fabrication process.

SUMMARY OF THE INVENTION

The need to reduce the time required for laser facet conditioning isaddressed by the present invention, which relates to laser devices and,more particularly, edge-emitting laser diodes having mirror facetpassivation coatings that are conditioned using an “ex-situ” irradiationprocess in place of the conventional reduced current operation approach.

In accordance with the teachings and principles of the presentinvention, an external energy source is utilized to irradiate thematerial used as the facet passivation layer. The passivation layershould preferably be insulating (or low conducting). In particular, itmay be formed using materials such as silicon, germanium or antimony.The irradiation process itself takes only seconds or a few minutes,compared to the extended hours of time required for the prior art“burn-in” conditioning process.

The external energy source may comprise a laser, flash lamp, electronbeam, or other suitable radiation source. The energy source may beoperated in either CW or pulsed fashion, where the passivation layer isirradiated with an irradiation dose sufficient to condition the completethickness of the layer of passivation material. This ex-situconditioning treatment is applied to facets of the laser diode and ispreferably performed while the devices are in bar form (i.e., beforedicing). However, it is to be understood that the inventive ex-situconditioning process may also be applied to individual devices afterdicing, performing ex-situ conditioning of either individual unmounteddies or mounted dies (e.g., devices mounted on cards, carriers, orsubmounts).

An exemplary ex-situ method of passivating facets of an edge-emittinglaser diode in accordance with one or more embodiments of the presentinvention includes the following steps: a) depositing, in a reactionchamber, one or more layers of passivation materials on bare facetsurfaces of the edge-emitting laser diode to form a facet coating of apredetermined thickness; b) removing the laser diode from the reactionchamber; and, c) irradiating the facet coating with a beam from anenergy source for a period of time sufficient to condition the facetcoating through the predetermined thickness. In an alternative method,the outer coating layers may be deposited over the passivation layersprior to performing the irradiation step (thus fully conditioning andproviding stabilization of the combination of the passivation layer andcoating layer).

Another embodiment of the present invention takes the form of anedge-emitting laser diode comprising a semiconductor substrate having awaveguide structure formed thereon for generating light at an operatingwavelength, a pair of cleaved facets formed on opposing faces of thewaveguide structure, passivation layers of a predetermined thicknessformed to cover the pair of cleaved facets, wherein the passivationlayers are fully conditioned through the predetermined thickness, and areflective coating formed directly over at least one of the passivationlayers.

Other and further embodiments and aspects of the present invention willbecome apparent during the course of the following discussion and byreference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic plan view of an edge-emitting semiconductor laserdiode;

FIG. 2 shows an exemplary arrangement for performing ex-situconditioning of laser diode passivation layers in accordance with one ormore embodiments of the present invention;

FIG. 3 shows an alternative arrangement for performing ex-situconditioning, in this case providing full conditioning/stabilization ofthe passivation layers and overlying coating layers; and

FIG. 4 contains a set of plots, showing the improvement in COD by usingex-situ conditioning in accordance with the present invention.

DETAILED DESCRIPTION

As will be described in detail below, the present invention is directedto the utilization of an ex-situ process to fully condition thepassivation layer used as a coating on exposed facets of a laser diode.Ex-situ is used here to emphasize the difference between conditioning asformed in accordance with the principles of the present invention (i.e.,conditioning provided by using an external energy source) and the priorart “in-situ” conditioning achieved by operation of the laser diodedevice itself (typically at a reduced current level for an extendedperiod of time). For the purposes of the present invention, the phrase“fully condition” primarily means to condition the material comprisingthe passivation layer (e.g., silicon, germanium, antimony) through thecomplete thickness of the layer. To “fully condition” can also bedescribed for the purposes of the present invention as providing anex-situ stabilization of the complete facet overlay, including both thepassivation layer and a standard coating layer overlying the passivationlayer (as well as all interfaces therebetween, such as the passivationfilm-chip interface).

As will be discussed below, the ex-situ approach of the presentinvention allows for the conditioning to be performed on a bar of laserdiodes (prior to dicing into individual devices) thus significantlyimproving the efficiency of the process over the prior artproduct-by-product approach. Additionally, the ex-situ process of thepresent invention takes only a matter of seconds or minutes to perform,depending on the size/area to be treated, not the hours required by theconventional device-operated conditioning approach.

Turning now to the figures, an exemplary laser diode is schematicallyillustrated in the plan view of FIG. 1. The laser is formed in asemiconductor opto-electronic chip (or “bar”) 10 having a front facet 12and an opposing rear facet 14. Bar 10 includes a vertical structure (notshown in detail) that is typically composed of layers of AlGaAs, GaAs,and related III-V semiconductor materials epitaxially deposited on aGaAs substrate. However, it is to be understood that other materialcombinations are possible within the scope of the present invention.

In the commercial production of these devices, a large number of suchbars are simultaneously formed on a single GaAs wafer, with the waferthen cleaved along natural cleavage planes to form a large number ofseparate bars 10 having the front and rear facets 12, 14, as well as theperpendicularly-arranged sides 16, 18, as shown in FIG. 1. Thesemiconductor processing performed on the wafer also forms a waveguidestructure 20 extending between and perpendicular to facets 12, 14. Whilein most cases waveguide structure 20 is a ridge waveguide, otherconfigurations are possible (e.g., a buried heterostructure waveguide,which may be preferred for high power applications). For many high powerapplications, waveguide structure 20 may have a width substantiallylarger than the lasing wavelength so as to form a broad-area laser.

As part of the fabrication process, cleaved facets 12, 14 are subjectedto the conventional E2 passivation process. That is, bars 10 are loadedinto a reaction chamber and passivation material(s) are deposited to apredetermined thickness to provide a coating over mirror surfaces offacets 12 and 14. The passivation materials need to be insulating (orlow conducting), preferably comprising silicon, germanium, or antimony,and may also comprise any oxide or nitride of these materials. Theas-deposited materials are shown as passivation layers 22, 24 in FIG. 1.It is at this point in the process that the ex-situ conditioning processof the present invention may be used.

In accordance with one or more embodiments of the present invention,conditioning of passivation layers 22, 24 is provided by an externalsystem 30, as shown in FIG. 2. External system 30 includes an energysource 32 for generating a beam 34, which is typically in the visiblerange (e.g., 532 nm) but may also comprise a UV or IR beam. Energysource 32 may emit in either CW or pulsed mode. In the specificembodiment illustrated in FIG. 2, beam 34 from energy source 32subsequently passes through a focusing lens 36 and scans along a portion38 of passivation layer 22 which overlies an active region of the laserdiode bar 10. Laser diode bar 10 may be mounted on a conventionalsub-mount fixture 40 and moved with respect to the radiation from energysource 32 so that the focused beam is scanned across the lateral extentof passivation layer 22. Energy source 32 may comprise any radiationsource capable of emitting radiation at an energy sufficient to createthe desired homogeneous conditioning of the passivation material. Inparticular, energy source 32 may comprise a laser source, a flash lamp,an electron beam source, or any other system that creates a beam with anenergy sufficient to condition passivation layer 22 through its completethickness.

A spectrometer 42, also shown in FIG. 2, may be utilized to monitor theconditioning process. For example, scattered/redirected radiation frompassivation layer 22 can be analyzed within spectrometer 42 usingconventional means to determine the point in time when full conditioninghas been achieved. Once the monitoring signal has leveled off, theexternal energy system may be de-activated.

It is to be understood that the same ex-situ radiation process can beused to fully condition passivation layer 24 along the opposite endfaceof the laser diode. Indeed, it is possible to configure a system whereboth facets are simultaneously conditioned. It has been found that theconditioning provided by this ex-situ irradiation process results in ahomogeneous conditioning of the passivation materials through thecomplete thickness of the passivation layer. This is a clear advantageover the prior art process of activating the devices and performing theconditioning at a reduced power level, which has been found to result attimes in a partial, inhomogeneous conditioning of the passivationmaterials.

As mentioned above, it is also possible to perform the conditioningprocess of the present invention after both the passivation layers andreflective coating layers have been applied over the laser facets. FIG.3 illustrates an exemplary laser diode, similar in structure to theconfiguration shown in FIG. 1, but in this case further processed todeposit a first coating layer 26 over passivation layer 22 and a secondcoating layer 28 over passivation layer 24. In most cases, siliconnitride is used as coating layers 26, 28. Other suitable coatingmaterials include, but are not limited to, silicon, germanium, galliumarsenide, silicon oxide, aluminum oxide, titanium oxide, aluminumnitride, and tantalum oxide.

Similar to the embodiment of FIG. 1, energy source 30 is used toirradiate both coating layer 26 and underlying passivation layer 22 soas to fully condition and stabilize the laser diode structure. Underirradiation, the structures of both the coating and passivation layerschange in a manner that stabilizes the device and results in creatingthe required high COD levels. For example, when silicon nitride is usedas the coating material, the silicon nitride remains amorphous duringirradiation (as opposed to crystallizing), but the atomic configurationsin the nitride material does change. At the same time, this irradiationcrystallizes the passivation layer and forms an interface between thepassivation layer and the chip.

Thus, in accordance with this FIG. 3 embodiment of the presentinvention, the phrase “fully condition” means to structurally change thecoating layer, crystallize the passivation layer, and create aninterface between the laser chip and the passivation layer. The ex-situconditioning process of the present invention can therefore be thoughtof as “stabilizing” the laser diode itself by virtue of the changes madeto these layers.

The COD current of devices formed in accordance with the presentinvention has been compared against devices using the conventionalburn-in process. It is recalled that “COD current” is defined as thecurrent at which the laser facet experiences catastrophic opticaldamage. FIG. 4 illustrates the results of this comparison. Inparticular, FIG. 4 contains a set of plots I showing the COD power as afunction of current for devices that have been subjected only to theconventional E2 process (without any post-process conditioning). PlotsII are associated with devices created using the same prior art E2process, followed by the conventional “in-situ” conditioning process ofoperating the devices at low current/power levels. Clearly, theperformance of these conditioned devices exceeds those in the firstgroup, with much higher COD levels. Plots III are associated withdevices formed in accordance with the present invention; that is, usingan ex-situ conditioning process to provide full conditioning of thepassivation layers. In particular, the results shown in FIG. 4 wereobtained from devices formed in accordance with the embodiment discussedabove in association with FIG. 3, where the ex-situ conditioning processwas formed to stabilize both the coating and passivation layers.

It is observed that the devices formed in accordance with the presentinvention exhibit a somewhat higher level of COD than those of the priorart. While this is clearly one goal of the present invention, the factthat full conditioning can be performed on the complete laser bar(instead of at the individual device level) is also significant and agreat improvement over the prior art. Moreover, the inventive ex-situcondition process is orders of magnitude more efficient than thestandard burn-in process, able to fully condition/stabilize thestructure in a matter of seconds or minutes, in comparison to the tensto hundreds of hours required for low-current level burn-in.

Summarizing, the process of the present invention has been found tohomogeneously and fully condition the standard E2 passivation layer (aswell as the overlying coating layer when present), eliminating thevertical and lateral conditioning inhomogeneity as found in the priorart. The inventive process is found to maximize the current level atwhich mirror damage occurs (i.e., the COD current/optical power) withoutburn-in. This eliminates the prior art's need to perform chip trainingby chip operation. The distribution of COD current within a productionlot has also been found to be reduced.

Moreover, as mentioned above, it is possible to perform ex-situ fullconditioning of laser facets at the bar level (i.e., before chipseparation). This allows for the full conditioning of a large number ofbars in a short period of time, as preferred for mass productionsituations. Indeed, the inventive approach also eliminates the need fora customer to perform any conditioning steps on the devices, as was thecase in certain situations in the past.

It is to be understood that the principles of the present invention maybe embodied in other specific forms without departing from its spirit oressential characteristics. The described embodiments are to beconsidered in all respects as only illustrative, not restrictive. Thescope of the invention, therefore, is indicated by the appended claimsrather than by the foregoing description. All changes that come withinthe meaning and range of equivalency of the claims are to be embracedwithin their scope.

What is claimed is:
 1. An edge-emitting laser diode comprising asemiconductor substrate having a waveguide structure formed thereon forgenerating light at an operating wavelength; a pair of cleaved facetsformed on opposing faces of the waveguide structure; a pair ofirradiated passivation layers, each irradiated passivation layercomprising a homogenous material selected from the group consisting of:silicon, germanium, antimony, as well as oxides and nitrides thereof,with each irradiated passivation layer formed to exhibit a predeterminedthickness and disposed to cover an associated cleaved facet of the pairof cleaved facets, each irradiated passivation layer exhibiting ahomogeneous structure through the predetermined thickness thereof,providing a pair of conditioned, irradiated passivation layers; and areflective coating layer formed directly over at least one conditioned,irradiated passivation layer of the pair of irradiated passivationlayers.
 2. The edge-emitting laser diode as defined in claim 1 whereinthe reflective coating layer is an irradiated reflective coating layer.3. The edge-emitting laser diode as defined in claim 1 wherein thereflective coating layer is formed of a material selected from the groupconsisting of: silicon, germanium, gallium arsenide, silicon oxide,silicon nitride, aluminum oxide, titanium oxide, aluminum nitride andtantalum oxide.
 4. The edge-emitting laser diode as defined in claim 1wherein the waveguide structure comprises a ridge waveguideconfiguration.
 5. The edge-emitting laser diode as defined in claim 1wherein the waveguide structure comprises a buried heterostructureconfiguration.
 6. A laser diode bar comprising a semiconductor substratehaving a waveguide structure formed thereon, the waveguide structureextending across a width sufficient to allow for the laser diode barstructure to be thereafter diced into individual edge-emitting laserdiode devices; a pair of cleaved facets formed on opposing faces of thelaser diode bar structure; a pair of irradiated passivation layers, eachirradiated passivation layer comprising a homogenous material selectedfrom the group consisting of: silicon, germanium, antimony, as well asoxides and nitrides thereof, with each irradiated passivation layerformed to exhibit a predetermined thickness and disposed to cover anassociated cleaved facet of the pair of cleaved facets, each irradiatedpassivation layer exhibiting a homogeneous structure through thepredetermined thickness thereof, providing a pair of conditioned,irradiated passivation layers; and a reflective coating layer formeddirectly over at least one conditioned, irradiated passivation layer ofthe pair of irradiated passivation layers.
 7. The laser diode bar asdefined in claim 6 wherein the reflective coating layer is an irradiatedreflective coating layer.
 8. The laser diode bar as defined in claim 6wherein the reflective coating layer is formed of a material selectedfrom the group consisting of: silicon, germanium, gallium arsenide,silicon oxide, silicon nitride, aluminum oxide, titanium oxide, aluminumnitride and tantalum oxide.
 9. The laser diode bar as defined in claim 6wherein the waveguide structure comprises a ridge waveguideconfiguration.
 10. The laser diode bar as defined in claim 6 wherein thewaveguide structure comprises a buried heterostructure configuration.